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[ research ... ]
Subjects of Research
- Crystal growth of anorganic materials from the melt
and vapour phase
- Studies of growth kinetics
- Powder and single crystal diffractometry, defect characterisation,
- Thermal analysis
- Optical and electrical characterisation
- Scanning Electron Microscopy
- Simulation of fluid dynamics in semiconductor melts
- Investigations of the fine structure of crystallized materials
Research topics
- Zone melting of Si-Ge-compounds
- Investigation of transport phenomena and growth kinetics
- Gas zone transport of massivem CdTe, (Cd,Zn)Te and Cd(Te,Se)
- Growth of semiconductor crystals in static and rotating magnetic fields
- Growth of single-element and compound semiconductor crystals using free zones (melt,
metallic solutions)
- Experimental and theoretical determination of the surface tension of molten
semiconductor materials
- Bridgman growth of II-VI-compound crystals from (non)stoechiometrically
composed melts with regulation of the vapour pressure
- Crystal growth experiments with semiconductor materials in space
- Position-resolved measurement of photoluminescence at low temperatures
- Determination of charge carrier concentrations and mobilities by means of
Hall effect measurements acc. to van-der-Pauw; PICTS (defect spectroscopy)
- Spreading resistance measurements
- Contact-free, position-resolved measurement of the specific resistance of
semiconductor materials by means of TDCM (Time Dependent Charge Measurements)
- Channelling-Pattern-Analysis of semiconductor materials by means of REM
- Modelling of flow phenomena in semiconductor melts (program FIDAP)
- Synthesis of ternary and multinary solid state compounds
- Investigation of unit cell geometry changes in mixed-crystal systems
- Investigation of structural changes in isotypic series
- Crystal structure analyses
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