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| Freiburger Kristallographische Kolloquien
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26.07.2011
Ass. Prof. Alexander Gelfgat
School of Mechanical Engineering, Faculty of Engineering,
Tel-Aviv University, Israel
"Computational / experimental study of instabilities for crystal growth related problems"
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06.06.2011
Dr. Michael Gonik
Centre for Thermophysical Researches "THERMO", Alexandrov, Russia
"Providing modeling of crystal growth with data on thermophysical properties"
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03.02.2011
Habilitationsvortrag:
Dr. Andreas Danilewsky
Institut für Geowissenschaften, Kristallographie
Albert-Ludwigs-Universität Freiburg
"Röntgentopographie mit weißer Synchrotronstrahlung:
Entwicklung und Anwendungen"
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18.01.2011
Prof. Brian Tanner
Dept. of Physics
Durham University, UK
"High resolution X-ray diffraction: A compromise between intensity and resolution"
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| 07.12.2010
Prof. Dr. Herbert Dittrich
Materialforschung und Physik, Abt. Mineralogie
Universität Salzburg
"Sulfosalze: Neue Materialien in Photovoltaik
und Thermoelektrik"
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| 09.11.2010
Dr. Michael Gonik
Centre for Thermophysical Researches "THERMO"
Centre for Material Researches "PHOTON", Alexandrov, Russia
"Crystal growth under conditions of weak
melt flows close to the melt-crystal interface"
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| 09.02.2010
Dipl.-Min. Christian Reimann
Crystal Growth Laboratory
Fraunhofer Institute Integrated Systems and Device Technology (IISB) Erlangen
"Einbau von O, N und C bei der gerichteten Erstarrung von
multi-kristallinem Silicium für die Photovoltaik"
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| 12.01.2010
Dipl.-Ing. Ralf Dirk Löffler
ANSYS Germany GmbH, Darmstadt
"Numerische Simulation von Kristallzüchtungsvorgängen -
CFD und gekoppelte Simulationen"
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| 16.06.2009
Prof. A. G. Ostrogorsky
Rensselaer Polytechnic Inst., NY
"Growth of Te and Zn doped InSb crystals in the
Microgravity Science Glovebox at the International Space Station"
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| 04.11.2008
Dipl.-Phys. Robert Heimburger
IKZ Berlin, Abt. Kristalline Schichten & Nanostrukturen
"Selektive Kristallisation von Silicium auf Glas aus
metallischen Lösungen"
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28.10.2008
Prof. Tatau Nishinaga
Toyohashi University of Technology, Toyohashi, Japan
"Molecular Beam Epitaxy (MBE) as a tool for under-
standing elementary crystal growth processes"
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30.06.2008
Dr. Martin Volz
NASA Marshall Space Flight Center, Huntsville (AL).
"Interface shape control using localized heating during Bridgman growth"
22.01.2008
Prof. Dr. Albrecht Seidl, Leiter Entwicklung EFG, Manager R&D EFG
WACKER SCHOTT Solar GmbH, Alzenau
"Rohstoffsparende Herstellung von Si-Wafern für die Photovoltaik mit dem EFG-Verfahren".
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11.12.2007
Zbigniew Zytkiewicz
Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
"Strain in laterally overgrown GaAs layers studied by
spatially resolved X-ray diffraction"
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