Dr. Tina Sorgenfrei
Diplom-Mineralogin
Kristallographie
Institut für Geo- und Umweltnaturwissenschaften
Albert-Ludwigs-Universität Freiburg
Hermann-Herder-Str. 5
D-79104 Freiburg
Tel. +49 (0) 761 / 203 6439
Fax.+49 (0) 761 / 203 6434
tina.sorgenfrei(at)fmf.uni-freiburg.de
aktuelle Projekte:
- InSituKris: In situ Beobachtung von Partikeln, ihren Bewegungsprofilen und Konvektionsphänomenen in transparenten Schmelzen
- KLUNKER: Konvektion und Benetzung in der Halbleiterkristallzüchtung unter Schwerelosigkeit
- ParSiWal 2: Bestimmung der kritischen Einfanggeschwindigkeit von Si3N4-Partikeln in Solar Silizium im Weltall
- ParSiWal: Bestimmung der kritischen Einfanggeschwindigkeit von SiC-Partikeln bei der gerichteten Erstarrung von Solarsilizium im Weltall
- KUBUS: Konvektion und Benetzung in der Halbleiterkristallzüchtung unter Schwerelosigkeit
detaillierte Informationen in der Forschungsdatenbank
Publikationen:
- Friedrich, J., Reimann, C., Jauss, T., Cröll, A., Sorgenfrei, T., Tao, Y., Derby, J.J.: Engulfment and pushing of Si3N4 and SiC particles during directional solidification of silicon under microgravity conditions. Journal of Crystal Growth 475 (2017) 33, doi: 10.1016/j.jcrysgro.2017.05.036
- Derby, J.J., Tao, Y., Reimann, C., Friedrich, J., Jauß, T., Sorgenfrei, T., Cröll, A.: A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth. Journal of Crystal Growth 463 (2017) 100, doi: 10.1016/j.jcrysgro.2017.02.012
- Sorgenfrei, T., Hess, A., Zähringer, J., Danilewsky, A., Cröll, A., Egorov, A., Senchenkov, A.: Growth of doped Ge crystals under µg and 1g to investigate the influence of different convection types. International Journal of Microgravity Science and Application 34 (1) (2017), 340116
- Sorgenfrei, T., Jauß, T., Cröll, A., Reimann, C., Friedrich, J., Volz, M.: The critical growth rate for particle incorporation during the directional solidification of solar silicon under microgravity. International Journal of Microgravity Science and Application 34 (1) (2017), 340115
- Tao, Y., Sorgenfrei, T., Jauß, T., Cröll, A., Reimann, C., Friedrich, J., Derby, J.J.: Particle engulfment dynamics under oscillating crystal growth conditions. Journal of Crystal Growth 468 (2017) 24, doi: 10.1016/j.jcrysgro.2016.10.049
- Kundin, J., Aufgebauer, H., Reimann, C., Seebeck, J., Friedrich, J., Jauß, T., Sorgenfrei, T., Cröll, A.: Dynamic modeling of critical velocities for the pushing/engulfment transition in the Si-SiC system under gravity conditions. Metallurgical and Materials Transactions A 48A (2016), 342, doi:10.1007/s11661-016-3817-8
- Senchenkov, A, Kolesnikov, N., Orlov, V., Hess, A., Zähringer, J., Sorgenfrei, T., Cröll, A.: Ge:Ga crystal growth within an RMF during the FOTON M4 mission. 10th PAMIR International Conference - Fundamental and Applied MHD (2016), 643
- Friedrich, J., Reimann, C., Jauß, T., Cröll, A., Sorgenfrei, T.: Interaction of SiC particles with moving solid-liquid interface during directional solidification of silicon. Journal of Crystal Growth 447 (2016), 18
- Aufgebauer, H., Kundin, J., Emmerich, H., Azizi, M., Reimann, C., Friedrich, J., Jauß, T., Sorgenfrei, T., Cröll, A.: Phase-field simulations of particle capture during the directional solidification of silicon. Journal of Crystal Growth 446 (2016), 12
- Banai, R.E., Burton, L.A., Hoi, S.G., Hofherr, F., Sorgenfrei, T., Walsh, A., To, B., Cröll, A., Brownson, J.R.S.: Ellipsometric characterization and density-functional theory analysis of anisotropic optical properties of single-crystal a-SnS. Journal of Applied Physics 116 (2014), 013511
- Sorgenfrei, T., Hofherr, F., Jauß, T., Cröll, A.: Synthesis and single crystal growth of SnS by Bridgman-Stockbarger technique. Crystal Research and Technology 48 (4) (2013), 193
- Sorgenfrei, T., Bachem, K.-H., Schneider, J., Kunzer, M., Kirste, L., Fiederle, M.: First principle studies on molecular doping of ZnO thin films by As2O3. Crystal Research and Technology 47 (3) (2012), 293
- Onufrijevs, P., Medvid, A., Dauksta, E., Trautnitz, T.: Decrease of Point Defect Concentration at a Surface of ZnO/Si Heterostructure by Powerful Laser Radiation. Advanced Materials Research 222 (2011), 158
- Trautnitz, T., Sorgenfrei, R., Fiederle, M.: Elimination of rotation domains in ZnO thin films on c-plane Al2O3 substrates. Journal of Crystal Growth 312 (4) (2010), 624
Lehre:
Vorlesungen:
- Space Groups and Crystal Structures - MSc course (WS 2011/12 - WS 2015/16)
- X-ray Difraction by Crystals - MSc course (SS 2012 - SS 2015)
- High-Resolution Spectroscopy - MSc course (SS 2012 - SS 2015, SS 2017)
- Kristallzüchtung - BSc course (WS 2016/17)
- Structure Analysis by X-ray Diffraction - MSc course (WS 2011/12)
Übungen:
- Kristalle und Minerale - Teil 1: Kristalle - BSc course (WS 2011/12 - WS 2017/18)
- Röntgenographische Untersuchungsmethoden - BSc course (SS 2011 - SS 2012)
Seminare:
- Geowissenschaftliches Seminar - BSc course (WS 2011/12 - WS 2017/18)
Praktika:
- Kristallographisches Praktikum: Versuch Röntgendiffraktometrie - BSc course (WS 2011/12 - WS 2015/16
- Kristallographisches Praktikum: Versuch Präparation - Diplom course (2007-2011)
- Crystal Growth Methods I - Chemical Reaction - MSc course (WS 2011/12 - WS 2017/18)
- Crystal Growth Methods I - Solution Growth - MSc course (WS 2016/17 - WS 2017/18)
- Crystal Growth Methods II - Bridgman Growth - MSc course (SS 2012 - SS 2017)
- Crystal Preparation - MSc course (SS 2012 - SS 2017)
- Thermal Analysis - MSc course (WS 2011/12 - WS 2017/18)
Betreute Abschlußarbeiten:
Masterarbeiten:
- Ul-Haq, Rana Sami (2016)
„Investigation of Novel Silicon Nitride Based Coatings on the Nucleation Process for mc-Si Ingots“
- Hamamera, Needa (2016)
„Phosphorus diffusion gettering of mc-Si“
- Hagopian, Krikor (2016)
„Process Development of Liqiud-Silicon Recharging for Silicon Ingot Growth by Directional Solidification “
- Pfändler, Nadine (2016)
„In-situ observation of the interaction of foreign phase particles and the growth front in transparent melts“
- Schimanowski, Irina (2015)
„Interaction of dislocations and grain boundaries in multicrystalline silicon”
- Öncü, Ahu (2014)
„Investigation of novel crucible materials and coatings for the directional solidification of PV silicon”
- Liu, Zhiyan (2014)
„Incorporation of particles in solar silicon“
- Hofherr, Frederic (2013)
„Bridgman growth and characterization of SnS“
Bachelorarbeiten:
- German, Alexander (2016)
„Strukturelle Charakterisierung von Zinnsulfid (SnS)“
- Lemmel, Frithjof (2015)
„Vapor phase growth and characterization of SnS single crystals“
- Roder, Melissa (2015)
„Bridgman growth and characterization of SnS single crystals“
- Döring, Philipp (2015)
„Untersuchungen zum Verhalten von unterschiedlich vorbehandelten Si3N4-Partikeln in Si“
- Herzner, Johannes (2014)
„Schmelzzüchtung und Charakterisierung von Bi2S3-Einkristallen“
- Weit, Swetlana (2013)
„Züchtung von Bi2S3-Einkristallen“
- Reichert, Vanessa (2013)
„Untersuchungen zur Synthese von Bi2S3“
- Pregler, Anja (2012)
„Untersuchungen zur Synthese von Zinnmonosulfid (SnS)“
- Pfändler, Nadine (2012)
„Schmelzzüchtung von Zinnmonosulfid (SnS)“
Ausbildung:
Wissenschaftliches Curriculum :
- since 2011: scientific employee and assistant Professor at the Crystallography, Institute for Geosciences at Albert-Ludwigs-University, Freiburg
- 2011: PhD, Dr. rer.nat. at the Freiburg Material Research Center (FMF), Faculty of Chemistry, Pharmacy and Geo Sciences of the Albert-Ludwigs University of Freiburg, PhD-thesis:
"Dotierung von ZnO-Schichten, hergestellt mittels Molekularstrahlepitaxie" - 2007: diploma thesis at the Freiburg Material Research Center (FMF):
"Optimierung von epitaktischen AlN-Schichten durch Substratvorbehandlung " - 2001-2007: Study of Mineralogy/Crystallography & Material Sciences at the Institute of Crystallography, Albert-Ludwigs-University of Freiburg, qualification "Diplom-Mineralogin"
- since 2013: assessor in the executive board of the DGKK
- since 2010: formation and organization of the initiave for young academics within the DGKK (jDGKK)
wichtige Links:
Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung (DGKK)