You are here: Home Publications Publications 2016

Publications 2016

 

 

Original papers in scientific journals:


 

  • Asadchikov V. E., Butashin, A.V., Buzmakov, A.V., Deryabin, A.N., Kanevsky, V.M., Prokhorov, I. A., Roshchin, B. S., Volkov, Yu. O., Zolotov, D. A., Jafari, P., Alexeev, P., Cecilia, A., Baumbach, T., Bessas, D., Danilewsky, A. N., Sergueev, I., Wille H. C., Hermann, H. P.: Single-crystal sapphire microstructure for high-resolution synchrotron x-ray monochromators Cryst Res Technol, 2016; 1-9 (4): 290-298. (download: http://dx.doi.org/10.1002/crat.201500343)
  • Aufgebauer H., Kundin J., Emmerich H., Azizi M., Reimann C., Friedrich J., Jauss T., Sorgenfrei T., Cröll A.: Phase-field simulations of particle capture during the directional solidification of silicon J Cryst Growth, 2016; 446. : http://dx.doi.org/10.1016/j.jcrysgro.2016.04.032 (in Druck)
  • Bose, A., R.K. Vijayaraghavan, A. Cowley, V. Cherman, O. Varela Pedreira, B.K. Tanner, A.N. Danilewsky, I. D. Wolf, P. J. McNally: Nondestructive Monitoring of Die Warpage in Encapsulated Chip Packages Ieee Transactions On Components Packaging And Manufacturing Technology, 2016; 6: 653-662. (download: http://dx.doi.org/10.1109/TCPMT.2016.2527060)
  • Cowley A., Ivankovic A., Wong C. S., Bennet N. S., Danilewsky A.N., Gonzalez M., Cherman V., Vandevelde B., De Wolf I., McNally, P. J.: B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages Microelectron Reliab, 2016; 59: 108-116. : http://dx.doi.org/10.1016/j.microrel.2015.12.030
  • Cröll A., Markert J., Volz M., Ostrogorsky A.: Wetting angles of monovalent indium iodide on different substrates Cryst Res Technol, 2016. : http://DOI: http://dx.doi.org/10.1002/crat.201600197
  • Friedrich J., Reimann C., Jauss T., Cröll A., Sorgenfrei T.: Interaction of SiC particles with moving solid-liquid interface during directional solidification of silicon J Cryst Growth, 2016; 447: 18-26. : http://dx.doi.org/10.1016/j.jcrysgro.2016.04.061
  • Gonik M., Cröll A., Wagner A.: Ge distribution in Si0.9Ge0.1 alloy ingot grown from thin melt layer Modern Electronic Materials, 2016. : http://dx.doi.org/10.1016/j.moem.2016.12.001 (in Druck)
  • Keller E.: On the unit cell volume expansion in homogeneous series of isotypic structures of "ionic" compounds Z Krist-cryst Mater, 2016; 231: 691-708.
  • Lankinen A., Tuomi T., Kostamo P., Jussila H., Sintonen S., Lipsanen H., Tilli M., Mäkinen J., Danilewsky A. N.: Synchrotron X-Ray Diffraction Topography Study of Bonding-Induced Strain in Silicon-on-Insulator Wafers Thin Solid Films, 2016; 603: 435-440. (download: http://dx.doi.org/10.1016/j.tsf.2016.02.052)
  • Rack A., Scheel M., Danilewsky A. N.: Real-time direct and diffraction X-ray imaging of irregular silicon wafer break-age IUCrJ, 2016; 3 (2): 108-114. : http://dx.doi.org/10.1107/S205225251502271X
  • Sintonen, S., Wahl, S., Richter, S., Meyer, S., Suihkonen, S., Schulz T., Irmscher K., Danilewsky A., Tuomi T., Stankiewicz R., Albrecht M.: Evolution of impurity incorporation during ammonothermal growth of GaN J Cryst Growth, 2016; 456: 51-57. : http://dx.doi.org/10.1016/j.jcrysgro.2016.08.044
  • Tanner B., Garagorri J., Gorostegui-Colinas E., Elizalde M.R., Allen D., McNally P., Wittge J., Ehlers C., Danilewsky A. N.: X-ray Asterism and the Structure of Cracks from Indentations in Silicon J Appl Crystallogr, 2016: 250-259. (download: http://dx.doi.org/10.1107/S1600576715024620)
  • Tao Y., Sorgenfrei T., Jauß T., Cröll A., Reimann C., Friedrich J., Derby J.: Particle engulfment dynamics under oscillating crystal growth conditions J Cryst Growth, 2016. : http://dx.doi.org/10.1016/j.jcrysgro.2016.10.049 (in Druck)
  • Wagner A., Cröll A., Hillebrecht H.: Si1-xGex crystal growth by the floating zone method starting from SPS sintered feed rods - a segregation study J Cryst Growth, 2016; 448: 109-116. : http://dx.doi.org/10.1016/j.jcrysgro.2016.05.024

 

 

Conference contributions:


 

  • Asadchikov, V. E., Alexeev, P., Bessas, D., Buzmakov, A. V., Cecilia, A., Chumakov, A., Danilewsky, A. N., Deryabin, A. N., Härtwig, J., Hermann, R. P., Jafari, A., Kanevsky, V. M., Prokhorov, I. A., Roshchin, B. S., Sergueev, I., Wille, H. C.: Growth of single crystal sapphire for applications in X-ray backscattering 2016: Fr1-T06-3 (18th International Conference on Crystal Growth and Epitaxy, ICCGE-18, Nagoya, Japan, Aug. 7-12).
  • Carl E. - R., Danilewsky A. N., Liermann H. - P., Mansfeld U., Langenhorst F., Kenkmann T.: Phase transitions of SiO2 under dynamic compression and up to 900 °C Z Kristallogr, 2016 Suppl. 36: 140 (24thAnnual Meeting of the German Crystallographic Society (DGK), Stuttgart, Germany, March 14-17).
  • Carl E. - R., Richter J., Danilewsky A. N., Vijayaraghavan R. K., Kelly S., McNally P, Konopkova Z., Liermann H. - P.: Phase transitions of silicon under dynamic and non-hydrostatic conditions Acta Crystallogr A, 2016; 72: 294 (30th Meeting of the European Crystallographic Assaciation, ECM-30, Basel, Schweiz, 28. Aug. - 1. Sept.).
  • Cröll A., Hess A., Zähringer J., Sorgenfrei T., Egorov A., Senchenkov A., Mazuruk K., Volz M.: Bridgman Growth of Germanium and Germanium-Silicon Crystals under Microgravity (invited) 2016: Mo1-G10-1 (18th International Conference on Crystal Growth and Epitaxy, ICCGE-18, Nagoya, Japan, Aug. 7-12).
  • Cröll A., Hess A., Zähringer J., Sorgenfrei T., Senchenkov A., Egorov A., Volz M.: Bridgman gowth of Ge and Ge-Si crystals under microgravity 2016 (NASA-MSFC microgravity meeting, EM 31, Marshall Space Flight Center, June 2).
  • Danilewsky A. N., Rack A., Scheel M.: Ultra High Speed In-Situ Characterisation of Defects in Single Crystals 2016: Th1-G09-4 (18th International Conference on Crystal Growth and Epitaxy, ICCGE-18, Nagoya, Japan, Aug. 7-12).
  • Danilewsky A. N., Rack A., Scheel M.: Towards Real Time X-Ray Imaging of Cracks and Fracture in Silicon MATERIALS STRUCTURE in Chemistry, Biology, Physics and Technology, 2016; 23 (3): 210-211 (13th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2016, Brno, Czech Republic, Sept. 4 - 8).
  • Friedrich J., Jauß T., Cröll A., Sorgenfrei T., Reimann C., Tao Y., Derby J.J.: Particle incorporation during solidification of silicon under microgravity 2016: Mo1-G10-3 (18th International Conference on Crystal Growth and Epitaxy, ICCGE-18, Nagoya, Japan, Aug. 7-12).
  • Friedrich J., Reimann C., Jauß T., Cröll A., Sorgenfrei T: Interaction of SiC particles with moving solid–liquid interface during directional solidification of silicon 2016; Abstracts (Deutsche Gesellschaft für Kristallwachstum und -züchtung DGKK-AK „Massive Halbleiterkristalle“, 12./13.10.2016 Erlangen).
  • Fritsch P., Rießle K., Sorgenfrei T., Cröll A., Danilewsky A.: Growth and Characterization of Germanium from Tin-Solution Abstracts, 2016: 96 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
  • Hess A., Sorgenfrei T., Zähringer J., Cröll A., Egorov A., Senchenkov A.: The influence of solutocapillary convection on the GeSi growth with free melt surfaces Abstracts, 2016: 94 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
  • Jauß T., Cröll A., Sorgenfrei T., Reimann C., Friedrich J.: The critical growth rate for particle incorporation during the directional solidification of solar silicon under microgravity Abstracts, 2016: 91 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
  • LeDonne A., Binetti S., Reimann C., Friedrich J., Cröll A., Sorgenfrei T., Jauss T.: Effect of melt convection and gravity on SiC formation during growth process of PV silicon Abstracts, 2016 (EMRS Spring Meeting 2016, Lille, France, May 2-6).
  • Le Donne A., Binetti S., Acciarri M., Reimann C., Friedrich J., Jauss T., Cröll A., Sorgenfrei T.: Impurities and defects distribution during the growth of PV silicon: influence of melt convection and gravity 2016 (32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016), Munich, Germany, June 20-24).
  • M. Volz, K. Mazuruk, , Cröll A.: Detached Solidification of Germanium-Silicon Crystals on the ISS 2016 (ISS R&D Conference 2016, San Diego, CA, USA, July 12-14).
  • Markert J., Cröll A.: Wetting Angles of Indium (I) Iodide with Different Crucible Materials Abstracts, 2016: 88 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
  • McNally P. J., B.K. Tanner, A.N. Danilewsky, N. Gorgi, Bose A., R.K. Vijayaraghavan, A. Cowley, V. Cherman, O. Varela Pedreira, I. De Wolf: X-ray diffraction imaging for real-time in situ monitoring of future 3-D photonics system packages 2016; Abstracts: 2014 (7th International Conference on Optical, Optoelectronic and Photonic Materials and Applications, ICOOPMA, Montreal, Canada, June 12-17).
  • Ostrogorsky A. G., Riabov V., Volz M. F., van den Berg L., Cröll A.: Detached Melt and Vapor Growth of InI in SUBSA Hardware 2016: Mo1-G10-2 (18th International Conference on Crystal Growth and Epitaxy, Nagoya, Japan, Aug. 7-12).
  • Senchenkov A., Kolesnikov N., Hess A., Zähringer J., Sorgenfrei T., Croell A.: Ge:Ga crystal growth within an RMF during the FOTON-M4 mission 2016 (10th PAMIR International Conference on Fundamental and Applied MHD, Cagliari/Sardinia, Italy, June 20‐24).
  • Sintonen, S., Suihkonen, S, Irmscher, K., Schulz, T., Danilewsky, A. N., Tuomi, T., Stankiewicz, R., Albrecht, M.: On the impurity incorporation evolution during growth of ammonothermal GaN Abstracts, 2016: 100 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
  • Sorgenfrei, T., Hess A., Zähringer J., Danilewsky A., Cröll A., Egorov A., Senchenkov A.: Growth of doped Ge crystals under µg and 1g conditions to determine the influence of different melt convection state Abstracts, 2016: 67 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
  • Sorgenfrei T, Gorfman S, Danilewsky A. N.: Virtuelle Realität in der Kristallographie 2016; Abstracts (GERMAN U15: 3. DIALOG ZUR LEHRE AN DER ALBERT-LUDWIGS-UNIVERSITÄT FREIBURG, Freiburg, 12.12.2016).
  • Tanner B., Danilewsky A. N., Bose A., Vijayaraghavan R. K., Cowley A., Cherman V., McNally P. J.: Non-destructive X-ray diffraction measurement of warpage in silicon die embedded in integrated circuit packages MATERIALS STRUCTURE in Chemistry, Biology, Physics and Technology, 2016; 23 (3): 211-212 (13th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2016, Brno, Czech Republic, Sept. 4 - 8).
  • Tao Y., SorgenfreiT., Jauß T., Cröll A., Reimann C., Friedrich J., Derby J.J.: A fundamental analysis of particle engulfment dynamics during crystal growth 2016 (18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, August 7-12).
  • Weit, S., Sorgenfrei, T., Cröll A., Danilewsky A.: Growth of bulk crystals in the germanium-silicon system (Poster Preis) Abstracts, 2016: 95 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
  • Yasseri M., Jauß T., Sorgenfrei T., Cröll A.: Influence of high temperature treatment on wetting behavior of silicon nitride powders used for investigation of particle incorporation in PV silicon Abstracts, 2016: 93 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
  • Zähringer J., Hess A., Sorgenfrei T., Cröll A., Egorov A., Senchenkov A.: Numerical simulation of natural and forced convection during Bridgman crystal growth under μg and 1g conditions Abstracts, 2016: 81 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).